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dc.contributor.authorDe Guzman, Joyce Ann T.; orcid: 0000-0001-5306-5033; email: joyceann.deguzman@manchester.ac.uk
dc.contributor.authorMarkevich, Vladimir P.
dc.contributor.authorCoutinho, José
dc.contributor.authorAbrosimov, Nikolay V.
dc.contributor.authorHalsall, Matthew P.
dc.contributor.authorPeaker, Anthony R.
dc.date.accessioned2021-09-17T09:13:26Z
dc.date.available2021-09-17T09:13:26Z
dc.date.issued2021-09-17
dc.date.submitted2021-06-27
dc.identifierhttps://chesterrep.openrepository.com/bitstream/handle/10034/625878/solr.202100459.pdf?sequence=2
dc.identifierhttps://chesterrep.openrepository.com/bitstream/handle/10034/625878/solr.202100459.xml?sequence=3
dc.identifier.citationSolar RRL, page 2100459
dc.identifier.urihttp://hdl.handle.net/10034/625878
dc.descriptionFrom Wiley via Jisc Publications Router
dc.descriptionHistory: received 2021-06-27, rev-recd 2021-09-04, pub-electronic 2021-09-17
dc.descriptionArticle version: VoR
dc.descriptionPublication status: Published
dc.descriptionFunder: Department of Science and Technology (DOST), Government of the Phlippines
dc.descriptionFunder: Fundação para a Ciência e a Tecnologia in Portugal; Grant(s): UIDB/50025/2020, UIDP/50025/2020
dc.description.abstractThe subject of hydrogen–boron interactions in crystalline silicon is revisited with reference to light and elevated temperature‐induced degradation (LeTID) in boron‐doped solar silicon. Ab initio modeling of structure, binding energy, and electronic properties of complexes incorporating a substitutional boron and one or two hydrogen atoms is performed. From the calculations, it is confirmed that a BH pair is electrically inert. It is found that boron can bind two H atoms. The resulting BH2 complex is a donor with a transition level estimated at E c–0.24 eV. Experimentally, the electrically active defects in n‐type Czochralski‐grown Si crystals co‐doped with phosphorus and boron, into which hydrogen is introduced by different methods, are investigated using junction capacitance techniques. In the deep‐level transient spectroscopy (DLTS) spectra of hydrogenated Si:P + B crystals subjected to heat‐treatments at 100 °C under reverse bias, an electron emission signal with an activation energy of ≈0.175 eV is detected. The trap is a donor with electronic properties close to those predicted for boron–dihydrogen. The donor character of BH2 suggests that it can be a very efficient recombination center of minority carriers in B‐doped p‐type Si crystals. A sequence of boron–hydrogen reactions, which can be related to the LeTID effect in Si:B is proposed.
dc.languageen
dc.rightsLicence for VoR version of this article: http://creativecommons.org/licenses/by/4.0/
dc.sourceissn: 2367-198X
dc.subjectResearch Article
dc.subjectResearch Articles
dc.subjectab initio modeling
dc.subjectboron–hydrogen
dc.subjectDLTS
dc.subjectLeTID
dc.subjectpassivation
dc.subjectsilicon
dc.subjectsolar cells
dc.titleElectronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon
dc.typearticle
dc.date.updated2021-09-17T09:13:26Z


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