Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps
AuthorsDe Guzman, Joyce Ann T.; orcid: 0000-0001-5306-5033; email: firstname.lastname@example.org
Markevich, Vladimir P.
Hawkins, Ian D.
Ayedh, Hussein M.
Abrosimov, Nikolay V.
Crowe, Iain F.
Halsall, Matthew P.
Peaker, Anthony R.
MetadataShow full item record
AbstractIndium‐doped silicon is considered a possible p‐type material for solar cells to avoid light‐induced degradation (LID), which occurs in cells made from boron‐doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium‐related LID are examined and a deep donor is detected, which is attributed to a negative‐U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron‐doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first‐principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.
Citationphysica status solidi (a), page 2100108
DescriptionFrom Wiley via Jisc Publications Router
History: received 2021-02-28, rev-recd 2021-06-11, pub-electronic 2021-07-21
Article version: VoR
Publication status: Published
Funder: EPSRC (UK); Grant(s): EP/TO25131/1
Funder: Department of Science and Technology (DOST), Government of the Phlippines
Funder: Fundação para a Ciência e a Tecnologia; Id: http://dx.doi.org/10.13039/100008382; Grant(s): UIDB/50025/2020, UIDP/50025/2020