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dc.contributor.authorZhang, Man
dc.contributor.authorChen, Zhe
dc.contributor.authorYue, Yajun
dc.contributor.authorChen, Tao
dc.contributor.authorYan, Zhongna
dc.contributor.authorJiang, Qinghui
dc.contributor.authorYang, Bin
dc.contributor.authorEriksson, Mirva
dc.contributor.authorTang, Jianhua
dc.contributor.authorZhang, Dou
dc.contributor.authorShen, Zhijian
dc.contributor.authorAbrahams, Isaac
dc.contributor.authorYan, Haixue
dc.date.accessioned2021-04-06T09:29:44Z
dc.date.available2021-04-06T09:29:44Z
dc.date.issued2021-03-08
dc.identifierhttps://chesterrep.openrepository.com/bitstream/handle/10034/624433/main%20text-clean%20version.pdf?sequence=4
dc.identifier.citationZhang, M., Chen, Z., Yue, Y., Chen, T., Yan, Z., Jiang, Q., ... Yan, H. (2021). Terahertz reading of ferroelectric domain wall dielectric switching. ACS Applied Materials & Interfaces, 13(10), 12622-12628. https://doi.org/10.1021/acsami.1c00523en_US
dc.identifier.issn1944-8244
dc.identifier.doi10.1021/acsami.1c00523
dc.identifier.urihttp://hdl.handle.net/10034/624433
dc.description“This document is the Accepted Manuscript version of a Published Work that appeared in final form in [ACS Applied Materials and Interfaces], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/acsami.1c00523en_US
dc.description.abstractFerroelectric domain walls (DWs) are important nano scale interfaces between two domains. It is widely accepted that ferroelectric domain walls work idly at terahertz (THz) frequencies, consequently discouraging efforts to engineer the domain walls to create new applications that utilise THz radiation. However, the present work clearly demonstrates the activity of domain walls at THz frequencies in a lead free Aurivillius phase ferroelectric ceramic, Ca0.99Rb0.005Ce0.005Bi2Nb2O9, examined using THz time domain spectroscopy (THz-TDS). The dynamics of domain walls are different at kHz and THz frequencies. At low frequencies, domain walls work as a group to increase dielectric permittivity. At THz frequencies, the defective nature of domain walls serves to lower the overall dielectric permittivity. This is evidenced by higher dielectric permittivity in the THz band after poling, reflecting decreased domain wall density. An elastic vibrational model has also been used to verify that a single frustrated dipole in a domain wall represents a weaker contribution to the permittivity than its counterpart within a domain. The work represents a fundamental breakthrough in understanding dielectric contributions of domain walls at THz frequencies. It also demonstrates that THz probing can be used to read domain wall dielectric switching.en_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.urlhttps://pubs.acs.org/doi/full/10.1021/acsami.1c00523en_US
dc.rightsCC0 1.0 Universal*
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.subjectCircuitsen_US
dc.subjectCeramicsen_US
dc.subjectInsulatorsen_US
dc.subjectMolecular structureen_US
dc.subjectPolarizationen_US
dc.titleTerahertz reading of ferroelectric domain wall dielectric switchingen_US
dc.typeArticleen_US
dc.identifier.eissn1944-8252en_US
dc.contributor.departmentUniversity of Chester; Queen Mary University of London; South-Central University for Nationalities; Central South University; Huazhong University of Science and Technology; Stockholm University; The University of Manchester;en_US
dc.identifier.journalACS Applied Materials and Interfacesen_US
or.grant.openaccessYesen_US
rioxxterms.funderNoen_US
rioxxterms.identifier.projectNoen_US
rioxxterms.versionAMen_US
rioxxterms.versionofrecord10.1021/acsami.1c00523en_US
rioxxterms.licenseref.startdate2022-02-17
dcterms.dateAccepted2021-02-17
rioxxterms.publicationdate2021-03-08
dc.date.deposited2021-04-06en_US
dc.indentifier.issn1944-8244en_US


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