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dc.contributor.authorChuying, Yu*
dc.contributor.authorZeng, Yang*
dc.contributor.authorYang, Bin*
dc.contributor.authorDonnan, Robert S.*
dc.contributor.authorHuang, Jinbao*
dc.contributor.authorXiong, Zhaoxian*
dc.contributor.authorMahajan, Amit*
dc.contributor.authorShi, Baogui*
dc.contributor.authorYe, Haitao*
dc.contributor.authorBinions, Russell*
dc.contributor.authorTarakina, Nadezda V.*
dc.contributor.authorReece, Michael J.*
dc.contributor.authorYan, Haixue*
dc.date.accessioned2018-01-02T15:01:52Z
dc.date.available2018-01-02T15:01:52Z
dc.date.issued2017-07-26
dc.identifier.citationChuying, Y., et al. (2017). Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss. Scientific Reports, 7, Article number: 6639. DOI: 10.1038/s41598-017-07019-9en
dc.identifier.doi10.1038/s41598-017-07019-9
dc.identifier.urihttp://hdl.handle.net/10034/620778
dc.description.abstractRealising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2 - 0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/articles/s41598-017-07019-9en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectTHzen
dc.subjectTiO2en
dc.subjectDielectricen
dc.subjectUltra-low lossen
dc.titleTitanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-lossen
dc.typeArticleen
dc.identifier.eissn2045-2322
dc.contributor.departmentUniversity of London; University of Chester; Xiamen University; Aston Universityen
dc.identifier.journalScientific Reports
dc.date.accepted2017-06-20
or.grant.openaccessYesen
rioxxterms.funderEPSRCen
rioxxterms.identifier.projectEPSRC Teranet fund (EP/M00306X/1).en
rioxxterms.versionAMen
rioxxterms.licenseref.startdate2017-07-26
refterms.dateFCD2019-07-15T09:55:36Z
refterms.versionFCDAM
refterms.dateFOA2017-07-20T00:00:00Z
html.description.abstractRealising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2 - 0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.


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