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dc.contributor.authorHuang, Jinbao*
dc.contributor.authorYang, Bin*
dc.contributor.authorYu, Chuying*
dc.contributor.authorZhang, Guang*
dc.contributor.authorXue, Hao*
dc.contributor.authorXiong, Zhaoxian*
dc.contributor.authorViola, Giuseppe*
dc.contributor.authorDonnan, Robert S.*
dc.contributor.authorYan, Haixue*
dc.contributor.authorReece, Michael J.*
dc.date.accessioned2016-03-17T12:49:42Z
dc.date.available2016-03-17T12:49:42Z
dc.date.issued2015-10-05
dc.identifier.citationHuang, J. B., et. al. (2015). Microwave and terahertz dielectric properties of MgTiO3–CaTiO3 ceramics. Materials Letters, 138(1), 225–227. DOI: 10.1016/j.matlet.2014.09.122en
dc.identifier.doi10.1016/j.matlet.2014.09.122
dc.identifier.urihttp://hdl.handle.net/10034/601574
dc.description.abstractThe THz dielectric properties of MgTiO3–CaTiO3 ceramics are reported. The ceramics were prepared via a solid-state reaction route and the sintering conditions were optimized to obtain ceramics with high permittivity and low loss in the terahertz frequency domain. The amount of impurities (MgTi2O5) and grain size increased with increasing sintering temperature. The dielectric properties improved with increasing density, and the best terahertz dielectric performance was obtained at 1260 °C, with a permittivity of 17.73 and loss of 3.07×10−3. Ceramics sintered above 1260 °C showed a sharp increase in loss, which is ascribed to an increase in the impurity content.
dc.language.isoenen
dc.publisherElsevieren
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0167577X14017698en
dc.subjectMicrowave; THz; Dielectrics;MgTiO3–CaTiO3en
dc.titleMicrowave and terahertz dielectric properties of MgTiO3–CaTiO3 ceramicsen
dc.typeArticleen
dc.identifier.eissn1873-4979
dc.contributor.departmentCollege of Materials; Queen Mary University of Londonen
dc.identifier.journalMaterials Letters
refterms.dateFOA2016-10-05T00:00:00Z
html.description.abstractThe THz dielectric properties of MgTiO3–CaTiO3 ceramics are reported. The ceramics were prepared via a solid-state reaction route and the sintering conditions were optimized to obtain ceramics with high permittivity and low loss in the terahertz frequency domain. The amount of impurities (MgTi2O5) and grain size increased with increasing sintering temperature. The dielectric properties improved with increasing density, and the best terahertz dielectric performance was obtained at 1260 °C, with a permittivity of 17.73 and loss of 3.07×10−3. Ceramics sintered above 1260 °C showed a sharp increase in loss, which is ascribed to an increase in the impurity content.


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