Browsing Electronic and Electrical Engineering by Authors
Microwave and terahertz dielectric properties of MgTiO3–CaTiO3 ceramicsHuang, Jinbao; Yang, Bin; Yu, Chuying; Zhang, Guang; Xue, Hao; Xiong, Zhaoxian; Viola, Giuseppe; Donnan, Robert S.; Yan, Haixue; Reece, Michael J.; et al. (Elsevier, 2015-10-05)The THz dielectric properties of MgTiO3–CaTiO3 ceramics are reported. The ceramics were prepared via a solid-state reaction route and the sintering conditions were optimized to obtain ceramics with high permittivity and low loss in the terahertz frequency domain. The amount of impurities (MgTi2O5) and grain size increased with increasing sintering temperature. The dielectric properties improved with increasing density, and the best terahertz dielectric performance was obtained at 1260 °C, with a permittivity of 17.73 and loss of 3.07×10−3. Ceramics sintered above 1260 °C showed a sharp increase in loss, which is ascribed to an increase in the impurity content.
SrFe12O19 based ceramics with ultra-low dielectric loss in the millimetre-wave bandYu, Chuying; Zeng, Yang; Yang, Bin; Wylde, Richard; Donnan, Robert S.; Wu, Jiyue; Xu, Jie; Gao, Feng; Abrahams, Isaac; Reece, Michael J.; et al. (AIP Publishing, 2018-04-02)Non-reciprocal devices such as isolators and circulators, based mainly on ferromagnetic materials, require extremely low dielectric loss in order for strict power-link budgets to be met for millimetre (mm)-wave and terahertz (THz) systems. The dielectric loss of commercial SrFe12O19 hexaferrite was significantly reduced to below 0.002 in the 75 - 170 GHz band by thermal annealing. While the overall concentration of Fe2+ and oxygen vacancy defects is relatively low in the solid, their concentration at the surface is significantly higher, allowing for a surface sensitive technique such as XPS to monitor the Fe3+/Fe2+ redox reaction. Oxidation of Fe2+ and a decrease in oxygen vacancies is found at the surface on annealing, which is reflected in the bulk sample by a small change in unit cell volume. The significant decrease in dielectric loss property can be attributed to the decreased concentration of charged defects such as Fe2+ and oxygen vacancies through annealing process, which demonstrated that thermal annealing could be effective in improving the dielectric performance of ferromagnetic materials for various applications.