• Microwave and terahertz dielectric properties of MgTiO3–CaTiO3 ceramics

      Huang, J. B.; Yang, Bin; Yu, Chuying; Zhang, Guang; Xue, Hao; Xiong, Zhaoxian; Viola, Giuseppe; Donnan, Robert S.; Yan, Haixue; Reece, Mike J.; College of Materials; Queen Mary University of London (Elsevier, 2015-10-05)
      The THz dielectric properties of MgTiO3–CaTiO3 ceramics are reported. The ceramics were prepared via a solid-state reaction route and the sintering conditions were optimized to obtain ceramics with high permittivity and low loss in the terahertz frequency domain. The amount of impurities (MgTi2O5) and grain size increased with increasing sintering temperature. The dielectric properties improved with increasing density, and the best terahertz dielectric performance was obtained at 1260 °C, with a permittivity of 17.73 and loss of 3.07×10−3. Ceramics sintered above 1260 °C showed a sharp increase in loss, which is ascribed to an increase in the impurity content.
    • Perovskite Srx(Bi1-xNa0.97-xLi0.03)0.5TiO3 ceramics with polar nano regions for high power energy storage

      Wu, Jiyue; Mahajan, Amit; Riekehr, Lars; Zhang, Hangfeng; Yang, Bin; Meng, Nan; Zhang, Zhen; Yan, Haixue; Queen Mary University of London; Uppsala University; University of Chester (Elsevier, 2018-06-06)
      Dielectric capacitors are very attractive for high power energy storage. However, the low energy density of these capacitors, which is mainly limited by the dielectric materials, is still the bottleneck for their applications. In this work, lead-free single-phase perovskite Srx(Bi1-xNa0.97-xLi0.03)0.5TiO3 (x=0.30 and 0.38) bulk ceramics, prepared using solid-state reaction method, were carefully studied for the dielectric capacitor application. Polar nano regions (PNRs) were created in this material using co-substitution at A-site to enable relaxor behaviour with low remnant polarization (Pr) and high maximum polarization (Pmax). Moreover, Pmax was further increased due to reversible electric field induced phase transitions. Comprehensive structural and electrical studies were performed to confirm the PNRs and the reversible phase transitions. And finally a high energy density (1.70 J/cm3) with an excellent efficiency (87.2%) was achieved using the contribution of PNRs and field-induced transitions in this material, making it among the best performing lead-free dielectric ceramic bulk material for high energy storage.
    • SrFe12O19 based ceramics with ultra-low dielectric loss in the millimetre-wave band

      Yu, Chuying; Zeng, Yang; Yang, Bin; Wylde, Richard; Donnan, Robert; Wu, Jiyue; Xu, Jie; Gao, Feng; Abrahams, Isaac; Reece, Mike J.; Yan, Haixue; Queen Mary University of London; Hunan University; National University of Defence Technology; University of Chester; Thomas Keating Ltd; Northwestern Polytechnical University (AIP Publishing, 2018-04-02)
      Non-reciprocal devices such as isolators and circulators, based mainly on ferromagnetic materials, require extremely low dielectric loss in order for strict power-link budgets to be met for millimetre (mm)-wave and terahertz (THz) systems. The dielectric loss of commercial SrFe12O19 hexaferrite was significantly reduced to below 0.002 in the 75 - 170 GHz band by thermal annealing. While the overall concentration of Fe2+ and oxygen vacancy defects is relatively low in the solid, their concentration at the surface is significantly higher, allowing for a surface sensitive technique such as XPS to monitor the Fe3+/Fe2+ redox reaction. Oxidation of Fe2+ and a decrease in oxygen vacancies is found at the surface on annealing, which is reflected in the bulk sample by a small change in unit cell volume. The significant decrease in dielectric loss property can be attributed to the decreased concentration of charged defects such as Fe2+ and oxygen vacancies through annealing process, which demonstrated that thermal annealing could be effective in improving the dielectric performance of ferromagnetic materials for various applications.
    • Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss

      Chuying, Yu; Zeng, Yang; Yang, Bin; Donnan, Robert; Huang, Jinbao; Xiong, Zhaoxian; Mahajan, Amit; Shi, Baogui; Ye, Haitao; Binions, Russell; Tarakina, Nadezda V.; Reece, Mike J.; Yan, Haixue; University of London; University of Chester; Xiamen University; Aston University (Nature Publishing Group, 2017-07-26)
      Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2 - 0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.