• Domain wall free polar structure enhanced photodegradation activity in nanoscale ferroelectric BaxSr1-xTiO3

      Wang, Yaqiong; Zhang, Man; Jianguo, Liu; Zhang, Haibin; Li, Feng; Tseng, Chiao-Wei; Yang, Bin; Smith, Graham C.; Zhai, Jiwei; Zhang, Zhen; et al.
      Ferroelectric materials exhibit anomalous behavior due to the presence of domains and domain walls which are related to the spontaneous polarization inherent in the crystal structure. Control of ferroelectric domains and domain walls has been used to enhance device performances in ultrasound, pyroelectric detectors and photovoltaic systems with renewed interest in nanostructuring for energy applications. It is also known that the ferroelectric including domain walls can double photocatalytic rate and increase carrier lifetime from μs to ms[1] However, there remains a lack of understanding on the different contributions of the domain and domain walls to photo-catalytic activities. Herein it is found, by comparing samples of nanostructured BaxSr1 xTiO3 with and without a polar domain, that the material with polar domains has a faster reaction rate (k=0.18 min-1) than the non polar one (k = 0.11 min-1). It is further revealed that the observed enhanced photoactivity of perovskite ferroelectric materials stems from the inherent polarization of the domain instead of domain walls. Here, the new understanding of the underlying physics of materials with a spontaneous dipole opens a door to enhance the performance of light induced energy harvesting systems.