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Microwave and terahertz dielectric properties of MgTiO3–CaTiO3 ceramicsHuang, Jinbao; Yang, Bin; Yu, Chuying; Zhang, Guang; Xue, Hao; Xiong, Zhaoxian; Viola, Giuseppe; Donnan, Robert S.; Yan, Haixue; Reece, Michael J.; et al. (Elsevier, 2015-10-05)The THz dielectric properties of MgTiO3–CaTiO3 ceramics are reported. The ceramics were prepared via a solid-state reaction route and the sintering conditions were optimized to obtain ceramics with high permittivity and low loss in the terahertz frequency domain. The amount of impurities (MgTi2O5) and grain size increased with increasing sintering temperature. The dielectric properties improved with increasing density, and the best terahertz dielectric performance was obtained at 1260 °C, with a permittivity of 17.73 and loss of 3.07×10−3. Ceramics sintered above 1260 °C showed a sharp increase in loss, which is ascribed to an increase in the impurity content.
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-lossChuying, Yu; Zeng, Yang; Yang, Bin; Donnan, Robert S.; Huang, Jinbao; Xiong, Zhaoxian; Mahajan, Amit; Shi, Baogui; Ye, Haitao; Binions, Russell; et al. (Nature Publishing Group, 2017-07-26)Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2 - 0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.