Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss

Hdl Handle:
http://hdl.handle.net/10034/620778
Title:
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss
Authors:
Chuying, Yu; Zeng, Yang; Yang, Bin; Donnan, Robert; Huang, Jinbao; Xiong, Zhaoxian; Mahajan, Amit; Shi, Baogui; Ye, Haitao; Binions, Russell; Tarakina, Nadezda V.; Reece, Mike J.; Yan, Haixue
Abstract:
Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2 - 0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.
Affiliation:
University of London; University of Chester; Xiamen University; Aston University
Citation:
Chuying, Y., et al. (2017). Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss. Scientific Reports, 7, Article number: 6639. DOI: 10.1038/s41598-017-07019-9
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Publication Date:
26-Jul-2017
URI:
http://hdl.handle.net/10034/620778
DOI:
10.1038/s41598-017-07019-9
Additional Links:
http://www.nature.com/articles/s41598-017-07019-9
Type:
Article
Language:
en
EISSN:
2045-2322
Appears in Collections:
Electronic and Electrical Engineering

Full metadata record

DC FieldValue Language
dc.contributor.authorChuying, Yuen
dc.contributor.authorZeng, Yangen
dc.contributor.authorYang, Binen
dc.contributor.authorDonnan, Roberten
dc.contributor.authorHuang, Jinbaoen
dc.contributor.authorXiong, Zhaoxianen
dc.contributor.authorMahajan, Amiten
dc.contributor.authorShi, Baoguien
dc.contributor.authorYe, Haitaoen
dc.contributor.authorBinions, Russellen
dc.contributor.authorTarakina, Nadezda V.en
dc.contributor.authorReece, Mike J.en
dc.contributor.authorYan, Haixueen
dc.date.accessioned2018-01-02T15:01:52Z-
dc.date.available2018-01-02T15:01:52Z-
dc.date.issued2017-07-26-
dc.identifier.citationChuying, Y., et al. (2017). Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss. Scientific Reports, 7, Article number: 6639. DOI: 10.1038/s41598-017-07019-9en
dc.identifier.doi10.1038/s41598-017-07019-9-
dc.identifier.urihttp://hdl.handle.net/10034/620778-
dc.description.abstractRealising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2 - 0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/articles/s41598-017-07019-9en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectTHzen
dc.subjectTiO2en
dc.subjectDielectricen
dc.subjectUltra-low lossen
dc.titleTitanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-lossen
dc.typeArticleen
dc.identifier.eissn2045-2322-
dc.contributor.departmentUniversity of London; University of Chester; Xiamen University; Aston Universityen
dc.identifier.journalScientific Reportsen
dc.date.accepted2017-06-20-
or.grant.openaccessYesen
rioxxterms.funderEPSRCen
rioxxterms.identifier.projectEPSRC Teranet fund (EP/M00306X/1).en
rioxxterms.versionAMen
rioxxterms.licenseref.startdate2017-07-26-
This item is licensed under a Creative Commons License
Creative Commons
All Items in ChesterRep are protected by copyright, with all rights reserved, unless otherwise indicated.