Atomic-layer-deposited aluminum and zirconium oxides for surface passivation of TiO 2 in High-Efficiency Organic Photovoltaics

Hdl Handle:
http://hdl.handle.net/10034/558307
Title:
Atomic-layer-deposited aluminum and zirconium oxides for surface passivation of TiO 2 in High-Efficiency Organic Photovoltaics
Authors:
Vasilopoulou, Maria; Georgiadou, Dimitra G.; Soultati, Anastasia; Boukos, Nikos; Gardelis, Spyros; Palilis, Leonidas C.; Fakis, Mihalis; Skoulatakis, Georgios; Kennou, Stella; Botzakaki, Martha; Georga, Stavroula; Krontiras, Christoforos A.; Auras, Florian; Fattakhova-Rohlfing, Dina; Bein, Thomas; Papadopoulos, Theodoros A.; Davazoglou, Dimitrios; Argitis, Panagiotis
Abstract:
The reduction in electronic recombination losses by the passivation of surfaces is a key factor enabling high-efficiency solar cells. Here we investigate a strategy to passivate surface trap states of TiO 2 films used as cathode interlayers in organic photovoltaics (OPVs) through applying alumina (Al2O3) or zirconia (ZrO2) insulating nanolayers by thermal atomic layer deposition (ALD). Our results suggest that the surface traps in TiO 2 are oxygen vacancies, which cause undesirable recombination and high electron extraction barrier, reducing the open-circuit voltage and the short-circuit current of the complete OPV device. It was found that the ALD metal oxides enable excellent passivation of the TiO2 surface followed by a downward shift of the conduction band minimum. OPV devices based on different photoactive layers and using the passivated TiO2 electron extraction layers exhibited a significant enhancement of more than 30% in their power conversion efficiencies (PCEs) as compared to their reference devices without the insulating metal oxide nanolayers as a result of significant suppression of charge recombination and enhanced electron extraction rates at the TiO2/ALD metal-oxide/organic interface.
Affiliation:
Institute of Renewable Energy and Environmental Technologies (IREET), Department of Engineering, University of Bolton; University of Chester
Citation:
Advanced Energy Materials 2014, 4 (15)
Publisher:
Wiley
Journal:
Advanced Energy Materials
Publication Date:
Oct-2014
URI:
http://hdl.handle.net/10034/558307
DOI:
10.1002/aenm.201400214
Additional Links:
http://doi.wiley.com/10.1002/aenm.201400214
Type:
Article
Language:
en_US
ISSN:
16146832
Sponsors:
European Social Fund (ESF) and Greek national funds via the Research Funding Program ARCHIMEDES III.
Appears in Collections:
Natural Sciences

Full metadata record

DC FieldValue Language
dc.contributor.authorVasilopoulou, Mariaen
dc.contributor.authorGeorgiadou, Dimitra G.en
dc.contributor.authorSoultati, Anastasiaen
dc.contributor.authorBoukos, Nikosen
dc.contributor.authorGardelis, Spyrosen
dc.contributor.authorPalilis, Leonidas C.en
dc.contributor.authorFakis, Mihalisen
dc.contributor.authorSkoulatakis, Georgiosen
dc.contributor.authorKennou, Stellaen
dc.contributor.authorBotzakaki, Marthaen
dc.contributor.authorGeorga, Stavroulaen
dc.contributor.authorKrontiras, Christoforos A.en
dc.contributor.authorAuras, Florianen
dc.contributor.authorFattakhova-Rohlfing, Dinaen
dc.contributor.authorBein, Thomasen
dc.contributor.authorPapadopoulos, Theodoros A.en
dc.contributor.authorDavazoglou, Dimitriosen
dc.contributor.authorArgitis, Panagiotisen
dc.date.accessioned2015-06-22T12:14:38Zen
dc.date.available2015-06-22T12:14:38Zen
dc.date.issued2014-10en
dc.identifier.citationAdvanced Energy Materials 2014, 4 (15)en
dc.identifier.issn16146832en
dc.identifier.doi10.1002/aenm.201400214en
dc.identifier.urihttp://hdl.handle.net/10034/558307en
dc.description.abstractThe reduction in electronic recombination losses by the passivation of surfaces is a key factor enabling high-efficiency solar cells. Here we investigate a strategy to passivate surface trap states of TiO 2 films used as cathode interlayers in organic photovoltaics (OPVs) through applying alumina (Al2O3) or zirconia (ZrO2) insulating nanolayers by thermal atomic layer deposition (ALD). Our results suggest that the surface traps in TiO 2 are oxygen vacancies, which cause undesirable recombination and high electron extraction barrier, reducing the open-circuit voltage and the short-circuit current of the complete OPV device. It was found that the ALD metal oxides enable excellent passivation of the TiO2 surface followed by a downward shift of the conduction band minimum. OPV devices based on different photoactive layers and using the passivated TiO2 electron extraction layers exhibited a significant enhancement of more than 30% in their power conversion efficiencies (PCEs) as compared to their reference devices without the insulating metal oxide nanolayers as a result of significant suppression of charge recombination and enhanced electron extraction rates at the TiO2/ALD metal-oxide/organic interface.en
dc.description.sponsorshipEuropean Social Fund (ESF) and Greek national funds via the Research Funding Program ARCHIMEDES III.en
dc.language.isoen_USen
dc.publisherWileyen
dc.relation.urlhttp://doi.wiley.com/10.1002/aenm.201400214en
dc.rightsArchived with thanks to Advanced Energy Materialsen
dc.subjectorganic photovoltaicsen
dc.subjectsurface passivationen
dc.subjectatomic layer depositionen
dc.subjecttitanium oxideen
dc.titleAtomic-layer-deposited aluminum and zirconium oxides for surface passivation of TiO 2 in High-Efficiency Organic Photovoltaicsen_US
dc.typeArticleen
dc.contributor.departmentInstitute of Renewable Energy and Environmental Technologies (IREET), Department of Engineering, University of Bolton; University of Chesteren
dc.identifier.journalAdvanced Energy Materialsen
dc.contributor.institutionInstitute of Nanoscience and Nanotechnology (INN); National Centre for Scientific Research “Demokritos”; 153 10 Aghia Paraskevi Attikis Athens Greeceen
dc.contributor.institutionInstitute of Nanoscience and Nanotechnology (INN); National Centre for Scientific Research “Demokritos”; 153 10 Aghia Paraskevi Attikis Athens Greeceen
dc.contributor.institutionInstitute of Nanoscience and Nanotechnology (INN); National Centre for Scientific Research “Demokritos”; 153 10 Aghia Paraskevi Attikis Athens Greeceen
dc.contributor.institutionInstitute of Nanoscience and Nanotechnology (INN); National Centre for Scientific Research “Demokritos”; 153 10 Aghia Paraskevi Attikis Athens Greeceen
dc.contributor.institutionInstitute of Nanoscience and Nanotechnology (INN); National Centre for Scientific Research “Demokritos”; 153 10 Aghia Paraskevi Attikis Athens Greeceen
dc.contributor.institutionDepartment of Physics; University of Patras; 26500 Patras Greeceen
dc.contributor.institutionDepartment of Physics; University of Patras; 26500 Patras Greeceen
dc.contributor.institutionSurface Science Laboratory, Department of Chemical Engineering; University of Patras; 26500 Patras Greeceen
dc.contributor.institutionSurface Science Laboratory, Department of Chemical Engineering; University of Patras; 26500 Patras Greeceen
dc.contributor.institutionDepartment of Physics; University of Patras; 26500 Patras Greeceen
dc.contributor.institutionDepartment of Physics; University of Patras; 26500 Patras Greeceen
dc.contributor.institutionDepartment of Physics; University of Patras; 26500 Patras Greeceen
dc.contributor.institutionDepartment of Chemistry and Center for Nanoscience (CeNS); University of Munich (LMU); 81377 Munich Germanyen
dc.contributor.institutionDepartment of Chemistry and Center for Nanoscience (CeNS); University of Munich (LMU); 81377 Munich Germanyen
dc.contributor.institutionDepartment of Chemistry and Center for Nanoscience (CeNS); University of Munich (LMU); 81377 Munich Germanyen
dc.contributor.institutionInstitute of Renewable Energy and Environmental Technologies (IREET); Department of Engineering; University of Bolton; Deane Rd. BL3 5AB Bolton UKen
dc.contributor.institutionInstitute of Nanoscience and Nanotechnology (INN); National Centre for Scientific Research “Demokritos”; 153 10 Aghia Paraskevi Attikis Athens Greeceen
dc.contributor.institutionInstitute of Nanoscience and Nanotechnology (INN); National Centre for Scientific Research “Demokritos”; 153 10 Aghia Paraskevi Attikis Athens Greeceen
This item is licensed under a Creative Commons License
Creative Commons
All Items in ChesterRep are protected by copyright, with all rights reserved, unless otherwise indicated.